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HN1B04F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B04F
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application
Q1:
Excellent hFE linearity : hFE(2) =25 (Min.) at VCE = -6V IC = -400mA Unit: mm
Q2:
Excellent hFE linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -35 -30 -5 -500 Unit V V V mA
1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1
(E1) (B1) (C2) (E2) (B2) (C1)
JEDEC JEITA TOSHIBA 2-3N1A Weight: 0.015g(typ.)
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 35 30 5 500 Unit V V V mA
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 300 150 -55~150 Unit mW C C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. 200mW per element must be exceeded.
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HN1B04F
Q1 Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-Emitter Voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE(1) hFE(2) VCE (sat) VBE fT Cob Test Circuit Test Condition VCB = -35V, IE = 0 VEB = -5V, IC = 0 VCE = -1V, IC = -100mA VCE = -6V, IC = -400mA IC = -100mA, IB = -10mA VCE = -1V, IC = -100mA VCE = -6V, IC = -20mA VCB = -6V, IE = 0, f = 1MHz Min 70 25 Typ. -0.1 -0.8 200 7 Max -100 -100 400 -0.25 -1.0 V V MHz pF Unit nA nA
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-Emitter Voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE(1) hFE(2) VCE (sat) VBE fT Cob Test Circuit Test Condition VCB = 35V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 100mA VCE = 6V, IC = 400mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCE = 6V, IC = 20mA VCB = 6V, IE = 0, f = 1MHz Min 70 25 Typ. 0.1 0.8 300 7 Max 100 100 400 0.25 1.0 V V MHz pF Unit nA nA
Marking
Equivalent Circuit (Top View)
6 5 4
50
Q1
Q2
1
2
3
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HN1B04F
Q1 (PNP transistor)
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HN1B04F
Q2 (NPN transistor)
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HN1B04F
(Q1, Q2 Common)
PC* - Ta
500
400
COLLECTOR POWER DISSPATION PC (mW)
300
200
100
0 0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta
(C)
*Total Rating.
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HN1B04F
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-22

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